note: all specifications are subjec t to change without notification. scd's for these devices should be re viewed by ssdi prior to release. data sheet #: FT0013C doc solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-4474 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com designer?s data sheet part number / ordering information 1 / sfr9130 __ __ __ screening 2 / __ = not screened tx = tx level txv = txv level s = s level lead options __ = straight leads db = down bend ub = up bend package 3 / j = to-257 sfr9130j radiation tolerant 20 amp, 100 volts, 90 m ? avalanche rated p-mosfet features: ? rugged trench technology ? low on-resistance: 60m ? typ ? radiation tolerant: less than 0.5v typical gate threshold shift @ tid= 100krad ? seu and segr resistant to let 38 ? avalanche rated ? hermetically sealed power packaging ? low total gate char ge, fast switching ? replacement for irf9130 types ? tx, txv, s-level screening available maximum ratings symbol value units drain ? source voltage v dss -100 v gate ? source voltage, continuous gate ? source voltage, transient v gs 15 25 v max. continuous drain current (package limited) @ t c = 25oc @ t c = 100oc i d1 i d2 20 15 a max. avalanche current @ l= 5.0mh i ar 26 a max. continuous drain current (tj limited) @ tj= 150oc i dm 26 a single pulse avalanche energy @ l= 5.0mh e as 300 mj total power dissipation @ t c = 25oc p d 75 w operating & storage temperature t op & t stg -55 to +150 oc maximum thermal resistance (junction to case) r 0 jc 1.65 oc/w notes: to-257 (j) *pulse test: pulse width = 300sec, duty cycle = 2%. 1 / for ordering information, price, and availability - contact factory. 2 / screening based on mil-prf-19500. screening flows available on request. 3 / unless otherwise specified, all electrical characteristics @25 o c.
note: all specifications are subjec t to change without notification. scd's for these devices should be re viewed by ssdi prior to release. data sheet #: FT0013C doc solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-4474 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com sfr9130j electrical characteristics 3 / symbol min typ max units drain to source breakdown voltage v gs = 0v, i d =0.25 ma bv dss -100 - 115 - v drain to source on state resistance v gs = 10v, i d = 13a, tj= 25 o c v gs = 10v, i d = 13a, tj= 125 o c r ds(on) - - 60 100 90 - m ? gate threshold voltage v ds = 5 v, i d = 250 ? ? a, tj= 125 o c v ds = 5 v, i d = 250 ? a, tj= -55 o c v gs(th) -2.0 -1.0 - -3.2 -2.5 -3.6 -4.0 - -5.0 v gate to source leakage v gs = 15v, tj= 25 o c v gs = 15v, tj= 125 o c i gss - - 1 10 50 200 na zero gate voltage drain current v ds = -100v, v gs = 0v, t j = 25 o c v ds = -100v, v gs = 0v, t j = 125 o c i dss - - 0.01 5 10 250 ? ? a forward transconductance v ds = 10v, i d = 10a, t j = 25 o c g fs - 15 - mho total gate charge gate to source charge gate to drain charge v gs = 10v v ds = 80v i d = 10a q g q gs q g d - - - 23 8.5 5 40 - - nc turn on delay time rise time turn off delay time fall time v gs = 10v v ds = 50v i d = 10a r g = 10 ? t d(on) t r t d(off) t f - - - - 65 25 75 30 100 50 150 50 nsec diode forward voltage i f = 10a, v gs = 0v v sd - 0.85 1.5 v diode reverse recovery time peak reverse recovery current reverse recovery charge i f = 10a, di/dt = 100a/usec t rr q rr - - 55 135 85 - nsec nc input capacitance output capacitance reverse transfer capacitance v gs = 0v v ds = 25v f = 1 mhz c iss c oss c rss - - - 3500 300 110 4000 400 200 pf package outline: to-257 (j) pinout: pin 1: drain pin 2: source pin 3: gate
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